GaN/SiC Long-Pulse L-Band Transistor: IGN1214L380 Datasheet
Source: Integra Technologies, Inc.
The IGN1214L380 long-pulse transistor is designed with GaN on SiC HEMT technology and operates at 380 W for applications from 1.2 – 1.4 GHz. The transistor exhibits 12 dB typical gain, and 60% efficiency, at 5 milliseconds and 30% pulse conditions. It is specified for use under Class AB operation. It is an internal impedance pre-matched device, and is included with depletion mode. For more specifications on the GaN L-band long-pulse transistor, download the datasheet.
access the Datasheet!
Log In
Get unlimited access to:
Trend and Thought Leadership Articles
Case Studies & White Papers
Extensive Product Database
Members-Only Premium Content
Welcome Back! Please Log In to Continue.
X
Enter your credentials below to log in. Not yet a member of RF Globalnet? Subscribe today.
Subscribe to RF Globalnet
X
Subscribe to RF Globalnet
This website uses cookies to ensure you get the best experience on our website. Learn more