Product/Service

13-16 GHz GaN Power Amplifier: APN226

Source: Northrop Grumman Microelectronic Products & Services

13-16 GHz GaN Power Amplifier: APN226

The APN226 GaN power amplifier covers the 13-16 GHz frequency range and features 20 dB (typ) linear gain, 40 dBm (typ) Psat, a 0.2um GaN HEMT process, 4 mil SiC substrate, and DC power of 24 VDC@ 880 mA.

This GaN HEMT amplifier is a two-stage power device ideal for point-to-point/multipoint radios and SATCOM terminals. It’s been passivated to ensure rugged and reliable operation in harsh environments. Download the datasheet for more information.