Datasheet | June 4, 2018

GaN C-Band 50Ω Transistor: IGT5259CW25 Datasheet

Source: Integra Technologies, Inc.

The IGT5259CW25 C-band transistor is designed with GaN on SiC HEMT technology exhibiting 12 dB typical gain and 48% drain efficiency. It is ideal for applications operating in the 5.2 – 5.9 GHz frequency range. This depletion mode device is 100% high power RF tested in a 50Ω RF test fixture. For more specifications on the GaN C-band 50Ω transistor, download the datasheet.