GaN C-Band 50Ω Transistor: IGT5259CW25

Source: Integra Technologies, Inc.

GaN C-Band 50Ω Transistor: IGT5259CW25

Integra Technologies introduces the C-band IGT5259CW25 transistor with GaN on SiC HEMT technology exhibiting 12 dB typical gain and 48% drain efficiency. It is ideal for applications operating in the 5.2 – 5.9 GHz frequency range. This depletion mode device is 100% high power RF tested in a 50Ω RF test fixture.

The IGT5259CW25 transistor is an internally impedance matched device, and requires negative gate voltage and bias sequencing. It is housed in a metal based package sealed with a ceramic-epoxy lid.

Additional features include:

  • POUT-PK = 25W @ CW/36V
  • Power Gain: 12.0 dB (typical)
  • Package Size: W=0.800″(20.32mm), L=0.400″(10.16mm)
  • 100% High Power RF Tested in 50Ω RF Test Fixture

For more specifications on the GaN C-band 50Ω transistor, download the datasheet.