71-76 GHz GaAs HEMT High Power Amplifier: APH668
Source: Northrop Grumman Microelectronic Products & Services
This GaAs three-state high power amplifier is ideal for use in commercial digital radios and wireless LANs. It operates in the 71 to 76 GHz frequency range, has a linear gain of 19dB (typ), a 28 dBm (typ) power saturation, 4 VDC @ 630 mA DC power, and more.
The APH668 71-76 GHz GaAs HEMT High Power Amplifier is ideal for applications involving short haul/high capacity links, enterprise wireless LAN, wireless fiber replacement, and more. The GaAs pHEMT devices are fully passivated, ensuring rugged and reliable operation. Both bond pad and backside metallization are Ti/Au, which is compatible with conventional die attach, thermocompression, and thermosonic wire bonding assembly techniques.
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