Product/Service

Flange Mount GaN Power Amplifier

Source: Northrop Grumman Microelectronic Products & Services

Flange Mount GaN Power Amplifier

This two-stage, 8 Watt GaN HEMT power amplifier covers the 27 to 31 GHz frequency range. It has a linear gain of 20 dB, 39 dBm (typ) power saturation, and 28 VDC DC power at 720 mA. It’s well suited for applications involving point-to-point/multipoint radios, and in SATCOM terminals.

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The APN180FP Flange Mount GaN Power Amplifier comes in a leaded ceramic flanged package. It’s easy to handle and assemble through traditional soldering and avoids bare die handling, attachment, and ribbon bonding. For information on performance characteristics, absolute maximum ratings, flanged package dimensions/pin locations, and more, download the datasheet.

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Northrop Grumman Microelectronic Products & Services