Back Channel presents the most captivating news and innovations in RF and microwaves. This week, we look at the projected growth of the RF interconnect market, explore hidden universes, celebrate Hispanic visionaries, and more.
This article marks the first in a short series on connector selection, testing, placement, and many other aspects of connectors that are sometimes overlooked.
GaN HEMT (high-electron-mobility transistor) and LDMOS MOSFET (metal-oxide semiconductor field-effect transistor) are voltage-controlled field-effect transistors requiring specific bias sequencing to ensure safe operation.
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