Back Channel presents the most captivating news and innovations in RF and microwaves. This week, we look at the projected growth of the RF interconnect market, explore hidden universes, celebrate Hispanic visionaries, and more.
GaN HEMT (high-electron-mobility transistor) and LDMOS MOSFET (metal-oxide semiconductor field-effect transistor) are voltage-controlled field-effect transistors requiring specific bias sequencing to ensure safe operation.
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