Design Of A High-Efficiency Broadband GaN HEMT Doherty Amplifier For New-Generation Cellular Transmitters

Next-generation 4G/5G telecommunication systems require power amplifiers (PAs) to operate with high efficiency over a wide frequency range to provide multiband and multi-standard concurrent operation. This application note describes the design of an innovative Doherty amplifier architecture using 200-W high-efficiency broadband 1.8-2.7 GHz GaN high-electron mobility transistor (HEMT) technology, which achieved average efficiencies of 50-60 percent for output powers up to 100 W and significantly reduced the cost, size, and power consumption of the transmitters. The designers used the NI AWR Design Environment platform, specifically Microwave Office circuit design software. Download the full paper for more information.