960-1215 MHz 500W Avionics TACAN Transistor

The high power pulsed transistor device part number IB0912M500 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing conditions and Vcc=50V, this common base device supplies a minimum of 500 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All transistors are 100% screened for large signal RF parameters.

Features

Silicon Bipolar

• Ultra-high fT

Class C Operation

• High Efficiency

• Single Power Supply

• Maximum Reliability

• Optimum Thermal Distribution

• Ease of Use
• Ultra-low Loss Design

• Unmatched Thermal Reliability

• Broadband
• Matched to 50ohms
• Long-term Correlation
• 100% Device RF Screening
• No External Tuning Allowed
• Micro-strip structure on soft pc board