Product/Service

2000 MTT-S: Mitsubishi Electronics' Boosts Output Power, Gain, and Efficiency of High-Power GaAs FETs

Source: Mitsubishi Electronics America Inc.
Four new gallium-arsenide (GaAs) field effect transistors (FETs) feature a hetero-junction FET (HFET) technology that incorporates a number of significant improvements
Mitsubishi Electronics America Inc.llium-arsenide (GaAs) field effect transistors (FETs) feature a hetero-junction FET (HFET) technology that incorporates a number of significant improvements, including the use of a new hetero-structure epitaxial technology, adoption of a T-shaped gate structure, and the employment of a new gate metalization system. The resulting device produces 160 watts of output power at S-band (an increase of 130 watts compared to previous-generation devices) and paves the way for even higher power devices in the future.

Introductions in the new HFET family of devices include:

  • MGFS52V2122 -- a 160-watt, push-pull configuration, power transistor intended for use in W-CDMA base stations operating in the 2.1- to 2.2-GHz range (S Band). Typical output power (P2dB) is 52 dBm and typical power gain (GLP) is 11 dB at 2.12 GHz.
  • MGFS48V2527 -- a 60-watt, push-pull configuration, power transistor intended for use in MMDS transmitters operating in the 2.5- to 2.7-GHz range (S Band). Typical output power at P2dB is 48 dBm and typical GLP is 10 dB across the band.
  • MGFL48V1920 -- a 60-watt watt, push-pull configuration, power transistor intended for use in PCS base stations operating in the 1.9- to 2.0-GHz range (L Band). Typical output power at P2dB is 48 dBm and typical GLP is 11.5 dB across the band.
  • MGFC47V5864 -- a 50-watt watt, single-ended, internally matched configuration, power transistor intended for use in solid-state power amplifiers operating for VSAT applications operating in the 5.8- to 6.4-GHz range (C-band). Typical output power at P2dB is 47 dBm and typical GLP is 9.5 dB across the band.

The MGFS52V2122, MGFS48V2527, MGFL48V1920, and MGFC47V5864 GaAs FETs are each available in a hermetically sealed metal-ceramic, low thermal-resistance package. Samples of the MGFS52V2122 device are available now, with volume production scheduled for the fourth quarter of 2000. The MGFS48V2527 and MGFL48V1920 devices are now in volume production. Samples of the MGFC47V5864 are scheduled to be available in July 2000, with volume production scheduled for the first quarter of 2001.

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