Products and Services
Transistors
Integra Technologies, Inc.
Integra Technologies, Inc. is
an ISO 9001:2000 certified manufacturer of state of the art RF power
transistors, pallets and RF high power amplifiers (HPA). The facility produces
150mm (6") wafers in its 300 square meter Class-100 clean room. In addition,
transistor assembly and 100% functional testing is performed onsite using fully
automated equipment.
Integra's patent protected technology consists of BIPOLAR and MOSFET
transistors, RF power transistors, bipolar RF power transistors, enhancement
mode FET RF power transistors, RF high power amplifiers, LDMOS and VDMOS RF
power transistors, and hybrid assemblies intended for Broadcast, Avionics, Radar
and other defense applications.
Integra is fully committed to a policy of total
customer satisfaction through compliance to our customers' requirements,
on-time delivery, and continual improvement of our quality systems.
Integra excels by providing the highest power, gain and efficiency transistors
available. Extensive technical support and application specific designs make
Integra the preferred choice for your system.
PALLETS
VHF TRANSISTORS
Integra's
lineup of VHF - VDMOS silicon MOSFET power transistors boasts performance
unmatched by any other vendor.
These
common source power transistor devices offer the highest pulsed RF power and
smallest circuit footprint available in any VHF - VDMOS silicon MOSFET high
power transistors.
All of Integra's VHF - VDMOS
silicon MOSFET high power transistor devices feature an all gold metal system
for unmatched reliability and maximum performance.
CLICK ON THE TRANSISTOR P/N ( PART NUMBER )
FOR A TRANSISTOR DATA SHEET
|
VHF-VDMOS Transistors |
Pout |
Pin |
Gain |
Min |
VCC |
Eff |
P/N |
|
CW Transistors |
225 |
10.0 |
13.5 |
10 |
28 |
57 |
|
|
125-167 MHz |
660 |
80.0 |
9.2 |
10 |
34 |
62 |
|
|
190-265 MHz |
690 |
110 |
8.0 |
10 |
34 |
58 |
Integra's lineup of UHF silicon bipolar and
MOSFET high power transistors boasts industry leading performance.
These common source and common base power devices
offer the highest pulsed RF power and smallest circuit footprint available in
any UHF silicon bipolar and MOSFET high power transistor.
Our latest series of pulsed UHF VDMOS transistors
are a first in the industry and provide a more rugged, higher power density
alternative to LDMOS offerings.
All of Integra's UHF silicon bipolar and MOSFET
high power transistor devices feature an all gold metal system for unmatched
reliability and maximum performance.
CLICK ON THE TRANSISTOR P/N ( PART NUMBER )
FOR A TRANSISTOR DATA SHEET
|
UHF-Bipolar Transistors |
Pout |
Pin |
Gain |
Min |
VCC |
Eff |
P/N |
|
450 MHz Transistors |
321 |
25 |
11.1 |
9 |
40 |
63 |
|
|
533 |
60 |
9.5 |
10 |
40 |
68 |
Integra's lineup of silicon bipolar and MOSFET
power transistors for avionics applications boasts performance unavailable from
any competing vendor.
These products are designed to address the most
stringent requirements for TCAS, MODE-S, MODE S-ELM, IFF, ADS-B, UAT, JTIDS, DME,
and TACAN.
These common source and common base devices offer
the highest pulsed RF power, highest gain and smallest footprint available in
any silicon bipolar and MOSFET power transistors for avionics.
Integra IMOS transistors are a first in the
industry and provide a more rugged, higher power density alternative to LDMOS
offerings. We also offer 50 ohm matched miniaturized amplifier pallets/modules
which simplify system integration considerably.
All of Integra's silicon bipolar and MOSFET
power transistors for avionics applications feature an all gold metal system for
unmatched reliability and maximum performance.
CLICK ON THE TRANSISTOR P/N ( PART NUMBER )
FOR A TRANSISTOR DATA SHEET
| Avionics | Pout (W) Typ. |
Pin (W) |
Gain (dB) Typ. |
Min IRL (dB) |
VCC (V) |
Eff (%) Typ. |
P/N |
| JTIDS/MIDS 960-1215MHz, 5.8 ms pulse burst,22.7% |
32 | 2.7 | 10.7 | 10.0 | 36 | 60.5 | IB0912L30 |
| 73 | 5 | 11.6 |
9.0 |
44 | 58.2 | IB0912L70 | |
| 235 | 22 | 10.3 |
10.0 |
44 |
55.5 |
IB0912L200 | |
| Transponder/Interrogator 1030/1090 MHz 10us, 1% LTDC |
87 | 8 | 10.4 | 10.0 | 50 | 70 | IB1011S70 |
| 200 | 12 | 12.2 | 10.0 | 60 | 70 | IB1011S190 | |
| 285 | 32 |
9.5 |
10.0 | 50 | 61 | IB1011S250 | |
| 350 | 25 |
11.5 |
10.0 | 50 | 59 | IB1011S350 | |
| 1070 | 112 |
9.8 |
10.0 | 50 | 57 | IB1011S1000 | |
| 1570 | 168 |
9.7 |
10.0 | 60 | 51 | IB1011S1500 | |
| DME 1025-1150 MHz 10us, 1% LTDC |
11 | 0.9 | 10.8 | 10.0 | 50 | 41 | IB1012S10 |
| 22 | 2 |
10.4 |
10.0 | 50 | 51 | IB1012S20 | |
| 55 | 5 | 10.6 | 10.0 | 50 | 48 | IB1012S50 | |
| 158 | 15 |
10.2 |
10.0 | 50 | 53 | IB1012S150 | |
| 530 | 50 | 10.3 | 10.0 | 50 | 54 | IB1012S500 | |
| 858 | 85 | 10.0 | 9.0 | 50 | 50 | IB1012S800 | |
| 1160 | 120 |
9.8 |
9.0 | 60 | 50 | IB1012S1100 | |
| TACAN 960-1215 MHz 10us, 10% LTDC |
82 | 6 | 11.4 | 9.0 | 50 | 60 | IB0912L70 |
| 365 | 33 | 10.7 | 10.0 | 50 | 55 | IB0912M350 | |
| 555 | 90 | 7.8 | 9.0 | 50 | 56 | IB0912M500 | |
| 637 | 90 | 8.5 | 9.0 | 50 | 53 | IB0912M600 | |
| TCAS 1030/1090 MHz 32us, 2% LTDC |
1145 | 145 | 9.0 | 10.0 | 60 | 44 | IB1011M1100 |
| Mode
S Interrogator 1030 MHz 0.5us on / 0.5us off x128, 1%LTDC |
11 | 1.0 | 10.4 | 10.0 | 50 | 52 | IB1011M10 |
| 25.1 | 0.9 | 13.8 |
10.0 |
50 |
61.4 |
IB1011M20 | |
| 75 | 8.8 | 9.2 | 10.0 | 50 | 65 | IB1011M70 | |
| 151 | 9 | 12.2 | 10.0 | 50 | 56 | IB1011M140 | |
| 205 | 12 | 12.3 | 10.0 | 50 | 75 | IB1011M190 | |
| 260 | 39.6 | 8.4 | 10.0 | 50 | 61 | IB1011M250 | |
| 375 | 31.2 | 11.1 | 10.0 | 50 | 72 | IB1011M350 | |
| 705 | 55 | 11.1 | 10.0 | 50 | 57 | IB1011M650 | |
| 825 | 110 | 8.8 | 10.0 | 50 | 52 | IB1011M800 | |
| 1040 | 126 | 9.2 | 10.0 | 50 | 58 | IB1011M1000 | |
| Mode
S-ELM Interrogator 1030 MHz 32 us on / 18us off x48. 6.4% LTDC |
17 |
0.6 |
14.5 | 10.0 | 48 | 66.7 | IB1011L15 |
| 45 |
4.8 |
9.7 |
10.0 |
48 |
57 |
IB1011L40 | |
| 120 | 9.5 | 11.0 | 10.0 | 48 | 65 | IB1011L110 | |
| 235 | 27 | 9.3 | 10.0 | 48 | 56 | IB1011L220 | |
| 520 | 50 | 10.2 | 10.0 | 48 | 57 | IB1011L470 | |
| LDMOS | Pout (W) Typ. |
Pin (W) |
Gain (dB) Typ. |
Min IRL (dB) |
VCC (V) |
Eff (%) Typ. |
P/N |
| LDMOS 1030/1090 MHz 50us, 2% LTDC |
20.5 |
0.75 | 14.4 | 10 | 28 | 47 | ILD1011M15 |
|
45.5 |
1.0 | 16.6 | 10 | 28 | 63 | ILD1011M30 | |
|
164 |
7.0 | 14.0 | 10 | 32 | 54 | ILD1011M150 | |
|
267 |
10.0 | 14.3 | 10 | 32 | 47 | ILD1011M250 | |
|
400 |
11.0 | 15.6 | 10 | 32 | 56 | ILD1011M400 |
Integra's lineup of L-band silicon bipolar
transistors boasts industry leading performance.
These common base devices offer the highest
pulsed RF power, highest gain and smallest footprint available.
All of Integra's L-band silicon bipolar
transistors feature an all gold metal system for unmatched reliability and
maximum performance.
CLICK ON THE TRANSISTOR P/N ( PART NUMBER )
FOR A TRANSISTOR DATA SHEET
|
L-Band Radar
|
Pout
(W) Typ. |
Pin
(W) |
Gain
(dB) Typ. |
Min
IRL (dB) |
VCC
(V) |
Eff
(%) Typ. |
P/N
|
| 870-990
MHz 300us, 15% |
13.7 | 2.4 |
7.6
|
10
|
36
|
53
|
IB0810M12 |
| 53 | 8.3 |
8.1
|
10
|
36
|
52
|
IB0810M50 | |
| 108 | 10 |
10.3
|
10
|
36
|
69
|
IB0810M100 | |
| 222 | 34 |
8.1
|
10
|
36
|
59
|
IB0810M210 | |
| 1.2-1.4
GHz 100us, 10% |
6.3 | 0.8 |
9.0
|
10
|
28
|
47
|
IB1214M6 |
| 46 | 4 |
10.6
|
10
|
40
|
54
|
IB1214M32 | |
| 63 | 8.7 |
8.6
|
10
|
40
|
47
|
IB1214M55 | |
| 176 | 27.3 |
8.1
|
10
|
40
|
50
|
IB1214M150 | |
| 333 | 60 |
7.4
|
10
|
40
|
54
|
IB1214M300 | |
| 1.2-1.4
GHz 300us,10% |
152 | 20 |
8.81 |
8.15
|
50 |
53.8 |
IB1214M130 |
| 409 | 60 |
8.33 |
8
|
50
|
52.7
|
IB1214M370 | |
| 375 | 49.66 |
8.78 |
8
|
42
|
59.9
|
IB1214M375 | |
| 1.45-1.55
GHz 100us burst, 1% |
650 | 96.5 |
8.28
|
8
|
50
|
46
|
IB1416S650 |
Integra's lineup of S-band silicon bipolar
power transistors boasts performance unmatched by any other vendor.
These transistors are designed to address the
most stringent requirements for civilian and military radar, including ground,
naval, and airborne mechanically and electronically scanned antennas.
These common base transistors offer the highest
pulsed RF power, highest gain and smallest footprint available.
Integra also offers the widest selection of
frequency ranges, power levels and pulse formats in the S-band microwave
transistor segment.
All of Integra's S-band silicon bipolar power
transistor devices feature an all gold metal system for unmatched reliability
and maximum performance.
CLICK ON THE TRANSISTOR P/N ( PART NUMBER )
FOR A TRANSISTOR DATA SHEET
|
S-Band
Radar Transistors |
Pout |
Pin |
Gain |
Min |
VCC |
Eff |
P/N |
|
2.2-2.6 GHz Transistors |
90 |
13 |
8.4 |
7.0 |
38 |
48 |
|
|
180 |
25.5 |
8.5 |
9.0 |
38 |
54 |
||
|
2.7-2.9 GHz Transistors |
6.5 |
1.0 |
8.1 |
7.0 |
32 |
42 |
|
|
30 |
3.5 |
9.3 |
7.0 |
36 |
45 |
||
|
100 |
10.5 |
9.8 |
7.0 |
36 |
51 |
||
|
185 |
21.4 |
9.4 |
7.0 |
36 |
48 |
||
|
192 |
21.4 |
9.5 |
7.0 |
36 |
50 |
||
|
2.7-3.1 GHz Transistors |
110 |
16 |
9.4 |
7.0 |
36 |
50 |
|
|
110 |
16 |
9.4 |
7.0 |
36 |
50 |
||
|
2.9-3.1 GHz Transistors |
36 |
4 |
9.5 |
7.0 |
36 |
47 |
|
|
170 |
20 |
9.3 |
7.0 |
36 |
44 |
||
|
2.9-3.4 GHz |
110 |
17.8 |
7.9 |
9.0 |
36 |
40 |
|
|
3.1-3.4 GHz Transistors |
17 |
2.5 |
8.3 |
7.0 |
36 |
45 |
|
|
27 |
2.6 |
10.1 |
10 |
36 |
47 |
||
|
80 |
12 |
8.2 |
7.0 |
36 |
50 |
||
|
125 |
14 |
9.5 |
10.0 |
36 |
42 |
||
|
3.1-3.5 GHz Transistors |
5 |
0.9 |
7.4 |
6.0 |
36 |
30 |
|
|
20 |
3.5 |
7.6 |
6.0 |
36 |
35 |
||
|
55 |
6.5 |
9.3 |
8.0 |
36 |
42 |
||
|
140 |
16.3 |
9.3 |
8.0 |
36 |
45 |
||
|
2.856 GHz Transistors |
300 |
27.5 |
10.4 |
10.0 |
40 |
50 |
|
|
3.000 GHz Transistors |
250 |
28 |
9.5 |
10.0 |
40 |
48 |
Integra's lineup of S-band silicon bipolar
power transistors with the world's highest power output, are unmatched by any
other vendor.
These transistors are designed to address the
most stringent requirements for medical, civilian and military radar, including
ground, naval, and airborne mechanically and electronically scanned antennas.
These common base transistors offer the highest
pulsed RF power, highest gain and smallest footprint available.
Integra also offers the widest selection of
frequency ranges, power levels and pulse formats in the S-band microwave
transistor segment.
All of Integra's S-band silicon bipolar power
transistor devices feature an all gold metal system for unmatched reliability
and maximum performance.
CLICK
ON THE TRANSISTOR P/N ( PART NUMBER ) FOR A TRANSISTOR DATA SHEET
|
S-Band
Radar Transistors |
Pout |
Pin |
Gain |
Min |
VCC |
Eff |
P/N |
||||
|
2.856 GHz Transistors |
300 |
27.5 |
10.4 |
10.0 |
40 |
50 |
|||||
|
3.000 GHz Transistors |
250 |
28 |
9.5 |
10.0 |
40 |
48 |
|||||
Integra's lineup of UHF, L and S-band silicon
bipolar pallets boasts industry leading performance.
These 50-ohm gain blocks enable the system
designer to quickly and easily design RF and microwave amplifiers without the
requirement for lengthy factory alignment procedures.
Integra also offers a wide selection of frequency
ranges, power levels and pulse formats.
All of Integra's UHF, L-band and S-band silicon
bipolar pallets feature an all gold metal system for unmatched reliability and
maximum performance.
CLICK
ON THE TRANSISTOR P/N ( PART NUMBER ) FOR A TRANSISTOR DATA SHEET
|
Pallets
|
Pout (W)
Typ. |
Pin (W)
|
Gain (dB) Typ.
|
Min IRL (dB)
|
VCC (V)
|
Eff (%) Typ.
|
P/N
|
| Mode
S-ELM Interrogator 1030 MHz 32us on, 18us off x 48, 6.7% |
800 | 120 | 8.3 | 10.0 | 48 | 50.0 | IBP1011L800 |
| 1.2-1.4
GHz 200us, 10% |
700 | 110 | 8.0 | 10.0 | 42 | 50.0 | IBP1214M700 |
| 2.25-2.55
GHz 200us, 10% |
300 | 50 | 7.7 | 10.0 | 34 | 40.0 | IBP2226M300 |
| 2.7-2.9
GHz 100us, 10% |
300 | 53 | 7.5 | 10.0 | 36 | 35.0 | IBP2729M300 |
| 2.7-3.1
GHz 200us, 10% |
200 | 27.0 | 8.7 | 10.0 | 36 | 38.0 | IBP2731M200 |
| 3.1-3.4
GHz 300us, 10% |
25 | 2.6 | 9.8 | 10.0 | 36 | 48.0 | IBP3134M25 |
| 2.9-3.4
GHz 100us, 10% |
215 | 38 | 7.5 | 9.0 | 36 | 45.0 | IBP2934M190 |
| 3.1-3.4
GHz 200us, 10% |
220 | 28 | 9.0 | 8.0 | 36 | 40.0 | IBP3134M220 |
| 3.1-3.5
GHz 100us, 10% |
150 | 27 | 7.5 | 8.0 | 36 | 40.0 | IBP3135M150 |
| 3.1-3.5
GHz 100us, 10% |
227 | 32 | 8.5 | 8.0 | 36 | 38.0 | IBP3135MH200 |
Integra's newly released series of CW VDMOS
transistors once again sets the standard for output power, gain, and efficiency.
All of these push pull devices feature gold metallization for maximum
reliability and are available now.
Features
- Highest power, gain, and efficiency
- Wide selection of power ratings
- Several industry standard footprints available
- Shipping in volume now
Click Here To Download:
Datasheet:
CW VDMOS Transistors
