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Transistors

Integra Technologies, Inc.
Integra Technologies, Inc. is an ISO 9001:2000 certified manufacturer of state of the art RF power transistors, pallets and RF high power amplifiers (HPA). The facility produces 150mm (6") wafers in its 300 square meter Class-100 clean room. In addition, transistor assembly and 100% functional testing is performed onsite using fully automated equipment
Details

Integra Technologies, Inc. is an ISO 9001:2000 certified manufacturer of state of the art RF power transistors, pallets and RF high power amplifiers (HPA). The facility produces 150mm (6") wafers in its 300 square meter Class-100 clean room. In addition, transistor assembly and 100% functional testing is performed onsite using fully automated equipment.

Integra's patent protected technology consists of BIPOLAR and MOSFET transistors, RF power transistors, bipolar RF power transistors, enhancement mode FET RF power transistors, RF high power amplifiers, LDMOS and VDMOS RF power transistors, and hybrid assemblies intended for Broadcast, Avionics, Radar and other defense applications.

Integra is fully committed to a policy of total customer satisfaction through compliance to our customers' requirements, on-time delivery, and continual improvement of our quality systems.

Integra excels by providing the highest power, gain and efficiency transistors available. Extensive technical support and application specific designs make Integra the preferred choice for your system.

VHF TRANSISTORS

UHF TRANSISTORS

AVIONICS TRANSISTORS

L-BAND TRANSISTORS

S-BAND TRANSISTORS

S-BAND MEDICAL TRANSISTORS

PALLETS

CW VDMOS TRANSISTORS


VHF TRANSISTORS

Integra's lineup of VHF - VDMOS silicon MOSFET power transistors boasts performance unmatched by any other vendor.

These common source power transistor devices offer the highest pulsed RF power and smallest circuit footprint available in any VHF - VDMOS silicon MOSFET high power transistors.

All of Integra's VHF - VDMOS silicon MOSFET high power transistor devices feature an all gold metal system for unmatched reliability and maximum performance.

CLICK ON THE TRANSISTOR P/N ( PART NUMBER ) FOR A TRANSISTOR DATA SHEET  

VHF-VDMOS

Transistors

Pout
(W)
Typ.

Pin
(W)

Gain
(dB)
Typ.

Min
IRL
(dB)

VCC

(V)

Eff
(%)
Typ.

P/N

CW Transistors

225

10.0

13.5

10

28

57

IDM175CW200 VHF TRANSISTORS

125-167 MHz
1ms, 20% Transistors

660

80.0

9.2

10

34

62

IDM165L650 VHF TRANSISTORS

190-265 MHz
1ms, 20% Transistors

690

110

8.0

10

34

58

IDM265L650 VHF TRANSISTORS

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UHF TRANSISTORS

Integra's lineup of UHF silicon bipolar and MOSFET high power transistors boasts industry leading performance.

These common source and common base power devices offer the highest pulsed RF power and smallest circuit footprint available in any UHF silicon bipolar and MOSFET high power transistor.

Our latest series of pulsed UHF VDMOS transistors are a first in the industry and provide a more rugged, higher power density alternative to LDMOS offerings.

All of Integra's UHF silicon bipolar and MOSFET high power transistor devices feature an all gold metal system for unmatched reliability and maximum performance.

CLICK ON THE TRANSISTOR P/N ( PART NUMBER ) FOR A TRANSISTOR DATA SHEET 

UHF-Bipolar

Transistors

Pout
(W)
Typ.

Pin
(W)

Gain
(dB)
Typ.

Min
IRL
(dB)

VCC

(V)

Eff
(%)
Typ.

P/N

450 MHz
30us, 10%

Transistors

321

25

11.1

9

40

63

IB450S300 UHF TRANSISTORS

533

60

9.5

10

40

68

IB450S500 UHF TRANSISTORS

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AVIONICS TRANSISTORS

Integra's lineup of silicon bipolar and MOSFET power transistors for avionics applications boasts performance unavailable from any competing vendor.

These products are designed to address the most stringent requirements for TCAS, MODE-S, MODE S-ELM, IFF, ADS-B, UAT, JTIDS, DME, and TACAN.

These common source and common base devices offer the highest pulsed RF power, highest gain and smallest footprint available in any silicon bipolar and MOSFET power transistors for avionics.

Integra IMOS transistors are a first in the industry and provide a more rugged, higher power density alternative to LDMOS offerings. We also offer 50 ohm matched miniaturized amplifier pallets/modules which simplify system integration considerably.

All of Integra's silicon bipolar and MOSFET power transistors for avionics applications feature an all gold metal system for unmatched reliability and maximum performance.

CLICK ON THE TRANSISTOR P/N ( PART NUMBER ) FOR A TRANSISTOR DATA SHEET 

Avionics Pout
(W)
Typ.
Pin
(W)
Gain
(dB)
Typ.
Min
IRL
(dB)
VCC
(V)
Eff
(%)
Typ.
P/N
JTIDS/MIDS
960-1215MHz,
5.8 ms pulse burst,22.7%
32 2.7 10.7 10.0 36 60.5 IB0912L30
73 5 11.6

9.0

44 58.2 IB0912L70
235 22 10.3

10.0

44

55.5

IB0912L200
Transponder/Interrogator
1030/1090 MHz
10us, 1% LTDC
87 8 10.4 10.0 50 70 IB1011S70
200 12 12.2 10.0 60 70 IB1011S190
285 32

9.5

10.0 50 61 IB1011S250
350 25

11.5

10.0 50 59 IB1011S350
1070 112

9.8

10.0 50 57 IB1011S1000
1570 168

9.7

10.0 60 51 IB1011S1500
DME
1025-1150 MHz
10us, 1% LTDC
11 0.9 10.8 10.0 50 41 IB1012S10
22 2

10.4

10.0 50 51 IB1012S20
55 5 10.6 10.0 50 48 IB1012S50
158 15

10.2

10.0 50 53 IB1012S150
530 50 10.3 10.0 50 54 IB1012S500
858 85 10.0 9.0 50 50 IB1012S800
1160 120

9.8

9.0 60 50 IB1012S1100
TACAN
960-1215 MHz
10us, 10% LTDC
82 6 11.4 9.0 50 60 IB0912L70
365 33 10.7 10.0 50 55 IB0912M350
555 90 7.8 9.0 50 56 IB0912M500
637 90 8.5 9.0 50 53 IB0912M600
TCAS
1030/1090 MHz
32us, 2% LTDC
1145 145 9.0 10.0 60 44 IB1011M1100
Mode S Interrogator
1030 MHz
0.5us on / 0.5us off
x128, 1%LTDC
11 1.0 10.4 10.0 50 52 IB1011M10
25.1 0.9 13.8

10.0

50

61.4

IB1011M20
75 8.8 9.2 10.0 50 65 IB1011M70
151 9 12.2 10.0 50 56 IB1011M140
205 12 12.3 10.0 50 75 IB1011M190
260 39.6 8.4 10.0 50 61 IB1011M250
375 31.2 11.1 10.0 50 72 IB1011M350
705 55 11.1 10.0 50 57 IB1011M650
825 110 8.8 10.0 50 52 IB1011M800
1040 126 9.2 10.0 50 58 IB1011M1000
Mode S-ELM Interrogator
1030 MHz
32 us on / 18us off
x48. 6.4% LTDC
17

0.6

14.5 10.0 48 66.7 IB1011L15
45

4.8

9.7

10.0

48

57

IB1011L40
120 9.5 11.0 10.0 48 65 IB1011L110
235 27 9.3 10.0 48 56 IB1011L220
520 50 10.2 10.0 48 57 IB1011L470
LDMOS Pout
(W)
Typ.
Pin
(W)

Gain
(dB)
Typ.
Min
IRL
(dB)
VCC

(V)
Eff
(%)
Typ.
P/N


LDMOS
1030/1090 MHz
50us, 2% LTDC

20.5

0.75 14.4 10 28 47 ILD1011M15

45.5

1.0 16.6 10 28 63 ILD1011M30

164

7.0 14.0 10 32 54 ILD1011M150

267

10.0 14.3 10 32 47 ILD1011M250

400

11.0 15.6 10 32 56 ILD1011M400

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L-BAND TRANSISTORS

Integra's lineup of L-band silicon bipolar transistors boasts industry leading performance.

These common base devices offer the highest pulsed RF power, highest gain and smallest footprint available.

All of Integra's L-band silicon bipolar transistors feature an all gold metal system for unmatched reliability and maximum performance.

CLICK ON THE TRANSISTOR P/N ( PART NUMBER ) FOR A TRANSISTOR DATA SHEET 

L-Band Radar
Pout
(W)
Typ.
Pin
(W)

Gain
(dB)
Typ.
Min
IRL
(dB)
VCC

(V)
Eff
(%)
Typ.
P/N


870-990 MHz
300us, 15%
13.7 2.4
7.6
10
36
53
IB0810M12
53 8.3
8.1
10
36
52
IB0810M50
108 10
10.3
10
36
69
IB0810M100
222 34
8.1
10
36
59
IB0810M210
1.2-1.4 GHz
100us, 10%
6.3 0.8
9.0
10
28
47
IB1214M6
46 4
10.6
10
40
54
IB1214M32
63 8.7
8.6
10
40
47
IB1214M55
176 27.3
8.1
10
40
50
IB1214M150
333 60
7.4
10
40
54
IB1214M300
1.2-1.4 GHz
300us,10%
152 20

8.81

8.15

50

53.8

IB1214M130
409 60

8.33

8
50
52.7
IB1214M370
375 49.66

8.78

8
42
59.9
IB1214M375
1.45-1.55 GHz
100us burst, 1%
650 96.5
8.28
8
50
46
IB1416S650

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S-BAND TRANSISTORS

Integra's lineup of S-band silicon bipolar power transistors boasts performance unmatched by any other vendor.

These transistors are designed to address the most stringent requirements for civilian and military radar, including ground, naval, and airborne mechanically and electronically scanned antennas.

These common base transistors offer the highest pulsed RF power, highest gain and smallest footprint available.

Integra also offers the widest selection of frequency ranges, power levels and pulse formats in the S-band microwave transistor segment.

All of Integra's S-band silicon bipolar power transistor devices feature an all gold metal system for unmatched reliability and maximum performance.

CLICK ON THE TRANSISTOR P/N ( PART NUMBER ) FOR A TRANSISTOR DATA SHEET 

S-Band Radar

Transistors

Pout
(W)
Typ.

Pin
(W)

Gain
(dB)
Typ.

Min
IRL
(dB)

VCC

(V)

Eff
(%)
Typ.

P/N

2.2-2.6 GHz
200us, 10%

Transistors

90

13

8.4

7.0

38

48

IB2226M80 S-BAND TRANSISTOR

180

25.5

8.5

9.0

38

54

IB2226M160 S-BAND TRANSISTOR

2.7-2.9 GHz
100us, 10%

Transistors

6.5

1.0

8.1

7.0

32

42

IB2729M5 S-BAND TRANSISTOR

30

3.5

9.3

7.0

36

45

IB2729M25 S-BAND TRANSISTOR

100

10.5

9.8

7.0

36

51

IB2729M90 S-BAND TRANSISTOR

185

21.4

9.4

7.0

36

48

IB2729M150 S-BAND TRANSISTOR

192

21.4

9.5

7.0

36

50

IB2729M170 S-BAND TRANSISTOR

2.7-3.1 GHz
200us, 10%

Transistors

110

16

9.4

7.0

36

50

IB2731M110 S-BAND TRANSISTOR

110

16

9.4

7.0

36

50

IB2731MH110 S-BAND TRANSISTOR

2.9-3.1 GHz
100us, 10%

Transistors

36

4

9.5

7.0

36

47

IB2931M30 S-BAND TRANSISTOR

170

20

9.3

7.0

36

44

IB2931M150 S-BAND TRANSISTOR

2.9-3.4 GHz
100us, 10%

110

17.8

7.9

9.0

36

40

IB2934M100 S-BAND TRANSISTOR

3.1-3.4 GHz
300us, 10%

Transistors

17

2.5

8.3

7.0

36

45

IB3134M15 S-BAND TRANSISTOR

27

2.6

10.1

10

36

47

IB3134M25 S-BAND TRANSISTOR

80

12

8.2

7.0

36

50

IB3134M70 S-BAND TRANSISTOR

125

14

9.5

10.0

36

42

IB3134M100 S-BAND TRANSISTOR

3.1-3.5 GHz
100us, 10%

Transistors

5

0.9

7.4

6.0

36

30

IB3135MH5 S-BAND TRANSISTOR

20

3.5

7.6

6.0

36

35

IB3135MH20 S-BAND TRANSISTOR

55

6.5

9.3

8.0

36

42

IB3135MH45 S-BAND TRANSISTOR

140

16.3

9.3

8.0

36

45

IB3135MH100 S-BAND TRANSISTOR

2.856 GHz
12us, 3%

Transistors

300

27.5

10.4

10.0

40

50

IB2856S250 S-BAND TRANSISTOR

3.000 GHz
12us, 1%

Transistors

250

28

9.5

10.0

40

48

IB3000S200 S-BAND TRANSISTOR

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S-BAND MEDICAL TRANSISTORS

Integra's lineup of S-band silicon bipolar power transistors with the world's highest power output, are unmatched by any other vendor.

These transistors are designed to address the most stringent requirements for medical, civilian and military radar, including ground, naval, and airborne mechanically and electronically scanned antennas.

These common base transistors offer the highest pulsed RF power, highest gain and smallest footprint available.

Integra also offers the widest selection of frequency ranges, power levels and pulse formats in the S-band microwave transistor segment.

All of Integra's S-band silicon bipolar power transistor devices feature an all gold metal system for unmatched reliability and maximum performance.

CLICK ON THE TRANSISTOR P/N ( PART NUMBER ) FOR A TRANSISTOR DATA SHEET

S-Band Radar Transistors

Pout
(W)
Typ.

Pin
(W)

Gain
(dB)
Typ.

Min
IRL
(dB)

VCC
(V)

Eff
(%)
Typ.

P/N

2.856 GHz
12us, 3%

Transistors

300

27.5

10.4

10.0

40

50

IB2856S250 S-BAND MEDICAL TRANSISTOR

3.000 GHz
12us, 1%

Transistors

250

28

9.5

10.0

40

48

IB3000S200 S-BAND MEDICAL TRANSISTOR

                         

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PALLETS

Integra's lineup of UHF, L and S-band silicon bipolar pallets boasts industry leading performance.

These 50-ohm gain blocks enable the system designer to quickly and easily design RF and microwave amplifiers without the requirement for lengthy factory alignment procedures.

Integra also offers a wide selection of frequency ranges, power levels and pulse formats.

All of Integra's UHF, L-band and S-band silicon bipolar pallets feature an all gold metal system for unmatched reliability and maximum performance.

CLICK ON THE TRANSISTOR P/N ( PART NUMBER ) FOR A TRANSISTOR DATA SHEET

Pallets
Pout (W)
Typ.
Pin (W)
Gain (dB) Typ.
Min IRL (dB)
  VCC (V)
Eff (%) Typ.
P/N
Mode S-ELM Interrogator
1030 MHz
32us on, 18us off x 48, 6.7%
800 120 8.3 10.0 48 50.0 IBP1011L800
1.2-1.4 GHz
200us, 10%
700 110 8.0 10.0 42 50.0 IBP1214M700
2.25-2.55 GHz
200us, 10%
300 50 7.7 10.0 34 40.0 IBP2226M300
2.7-2.9 GHz
100us, 10%
300 53 7.5 10.0 36 35.0 IBP2729M300
2.7-3.1 GHz
200us, 10%
200 27.0 8.7 10.0 36 38.0 IBP2731M200
3.1-3.4 GHz
300us, 10%
25 2.6 9.8 10.0 36 48.0 IBP3134M25
2.9-3.4 GHz
100us, 10%
215 38 7.5 9.0 36 45.0 IBP2934M190
3.1-3.4 GHz
200us, 10%
220 28 9.0 8.0 36 40.0 IBP3134M220
3.1-3.5 GHz
100us, 10%
150 27 7.5 8.0 36 40.0 IBP3135M150
3.1-3.5 GHz
100us, 10%
227 32 8.5 8.0 36 38.0 IBP3135MH200

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CW VDMOS TRANSISTORS

Integra's newly released series of CW VDMOS transistors once again sets the standard for output power, gain, and efficiency. All of these push pull devices feature gold metallization for maximum reliability and are available now.

Features

  • Highest power, gain, and efficiency
  • Wide selection of power ratings
  • Several industry standard footprints available
  • Shipping in volume now

Click Here To Download:
Datasheet: CW VDMOS Transistors

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