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SXB-4089 400-2500 MHz 1/2 W Medium Power InGaP/GaAs HBT Amplifier With Active Bias
RF Micro Devices, Inc.
Sirenza Microdevices' SXB-4089 amplifier is a high efficiency InGaP/ GaAs
Heterojunction Bipolar Transistor MMIC housed in low-cost, surfacemountable plastic package
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•Datasheet: SXB-4089 400-2500 MHz 1/2 W Medium Power InGaP/GaAs HBT Amplifier With Active Bias
Sirenza Microdevices' SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost, surfacemountable plastic package.
•Datasheet: SXB-4089 400-2500 MHz 1/2 W Medium Power InGaP/GaAs HBT Amplifier With Active Bias
•Datasheet: SXB-4089 400-2500 MHz 1/2 W Medium Power InGaP/GaAs HBT Amplifier With Active Bias
Sirenza Microdevices' SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost, surfacemountable plastic package.
These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, WCDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.
Product Features
- On-Chip Active Bias Control
- High OIP3: +45.0dBm typ.
- High P1dB: +28.0dBm typ.
- High Gain: +20dB at 880MHz
- Robust Class 2 ESD Rating, 2000v
- W-CDMA, PCS, Cellular Systems
- Multi-Carrier Applications
•Datasheet: SXB-4089 400-2500 MHz 1/2 W Medium Power InGaP/GaAs HBT Amplifier With Active Bias
