SXA-389B 400-2500 MHz 1/4 W Medium Power GaAs HBT Amplifier With Active Bias

RF Micro Devices, Inc.

Sirenza Microdevices' SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor MMIC housed in low-cost surfacemountable plastic package

Details

Click Here To Download:
•Datasheet: SXA-389B 400-2500 MHz 1/4 W Medium Power GaAs HBT Amplifier With Active Bias
•Application Note: Using SXA-389B with Original SXA-389 Application Circuit

Sirenza Microdevices' SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, WCDMA applications.

Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.

Product Features

On-Chip Active Bias Control
High OIP3: +42.0dBm typ.
High P1dB: +25.0dBm typ.
High Gain: +18.5dB at 850MHz
Patented High Reliabilty GaAs HBT Technology
Surface-Mountable Power Plastic Package
Lower Thermal Resistance for Increased MTTF

Product Applications

W-CDMA, PCS, Cellular Systems
Multi-Carrier Applications
High Linearity IF Amplifiers

Click Here To Download:
•Datasheet: SXA-389B 400-2500 MHz 1/4 W Medium Power GaAs HBT Amplifier With Active Bias
•Application Note: Using SXA-389B with Original SXA-389 Application Circuit

RF Micro Devices, Inc.