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•Datasheet: SPF-2086T 0.1-12 GHz Low Noise pHEMT GaAs FET

Sirenza Microdevices' SPF-2086T is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent output TOI of 32 dBm. It provides ideal performance as driver stages in many commercial, industrial and military LNA applications.

Product Features

• 22.0dB Gmax at 1.9GHz
• 0.4dB Fmin at 1.9GHZ
• +32.0dBm OIP3
• +20.0dBm Output Power at 1dB Compression

Product Applications

• LNA for Analog and Digital Wireless Systems
• Fixed Wireless, Pager Systems
• 3G, Cellular, PCS
• Driver Stage for Low Power Applications

Downloads:
•Datasheet: SPF-2086T 0.1-12 GHz Low Noise pHEMT GaAs FET

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