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SPA-2318 1700-2200 MHz 1 Watt Power Amp With Active Bias
RF Micro Devices, Inc.
Sirenza Microdevices' SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor amplifier housed in a low-cost surface-mountable plastic package.
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•Datasheet: SPA-2318 1700-2200 MHz 1 Watt Power Amp With Active Bias
Sirenza Microdevices' SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
•Datasheet: SPA-2318 1700-2200 MHz 1 Watt Power Amp With Active Bias
•Datasheet: SPA-2318 1700-2200 MHz 1 Watt Power Amp With Active Bias
Sirenza Microdevices' SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960 and 2140 MHz bands. Its high linearity makes it an ideal choice for multicarrier and digital applications.
Features
- High Linearity Performance: +47.0dBm typ. OIP3 at 2140 MHz
- +21.7dBm W-CDMA Channel Power at -45.0dBc ACP
- On-Chip Active Bias Control
- High Gain: 23.0dB typ.
- Patented High Reliability GaAs HBT Technology
- Surface-Mountable Plastic Package
- W-CDMA Systems
- Multi-Carrier Applications
- PCS Systems
•Datasheet: SPA-2318 1700-2200 MHz 1 Watt Power Amp With Active Bias
