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SPA-1118 850 MHz, 1 Watt Power Amplifier With Active Bias

RF Micro Devices, Inc.
Sirenza Microdevices' SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.
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Sirenza Microdevices' SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850 MHz band. Its high linearity makes it an ideal choice for wireless data and digital applications.

Product Features

  • On-Chip Active Bias Control
  • Patented High Reliability GaAs HBT Technology
  • High Linearity Performance: +48.0dBm OIP3 typ.
  • Surface-Mountable Plastic Package

Product Applications

  • W-CDMA Systems
  • Multi-Carrier Applications
  • AMPS, ISM Applications

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RF Micro Devices, Inc.

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