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SHF-0189 0.05-6 GHz, 0.5 Watt GaAs HFET
RF Micro Devices, Inc.
Sirenza Microdevices' SHF-0189 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.
Output power at 1dB compression for the SHF-0189 is +27 dBm when biased for Class AB operation at 8V,100mA. The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems.
Product Features
- +27dBm Output Power at 1dB Compression
- +40.0 dBm Output IP3
- High Drain Efficiency: Up to 46 percent at Class AB
- 18dB Gain at 900 MHz (Application Circuit)
- 16.5dB Gain at 1960MHz (Application Circuit)
- See App Note AN-031 for Circuit Details
Product Applications
- Analog and Digital Wireless System
- 3G, Cellular, PCS
- Fixed Wireless, Pager Systems
Click here to download the product datasheet
