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SGB-6533 DC-3.0 GHz SiGe HBT Gain Block with Active Bias
RF Micro Devices, Inc.
Sirenza Microdevices' SGB-6533 is a high performance
SiGe HBT MMIC amplifier utilizing a Darlington configuration
with an active bias network
Sirenza Microdevices' SGB-6533 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply the SGB-6533 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-6533 product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band.
Product Features
- On-Chip Active Bias Control
- No Drop Resistor Required
- 3 x 3 QFN 16 Pin Package
- P1dB: +18.4 dB @ 1950 MHz
- IP3: +32.0 dBm @ 1950 MHz
- Robust Class 1C ESD Rating
- 5v Applications
- LO Buffer Amplifier
- RF Pre-driver Stage
- RF Receiver Amplifier Stage
