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SGA-8343 Low Noise, High Gain SiGe HBT
RF Micro Devices, Inc.
Sirenza Microdevices' SGA-8343 is a high performance Silicon
Germanium Heterostructure Bipolar Transistor (SiGe HBT)
designed for operation from DC to 6 GHz.
Sirenza Microdevices' SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for lowvoltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required.
Features
- 6GHz Useful Bandwidth
- Low Fmin: 0.9dB @ 0.9GHz, 1.1dB @ 1.9GHz
- High Gmax: 24dB @ 0.9GHz, 19.0dB @ 1.9GHz
- OIP3: +28.5dBm
- P1dB: +13.0dBm
- Low Cost High Performance SiGe HBT
Applications
- LNA for Analog and Digital Wireless Systems
- Fixed Wireless, Pager Systems
- Wireless Data
- Oscillators
- Driver Stage for Low Power Applications
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