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SBW-5089 DC-8 GHz Cascadable InGaP/GaAs MMIC Amplifier
RF Micro Devices, Inc.
Sirenza Microdevices' SBW-5089 is a high performance
InGaP/GaAs Heterojunction Bipolar Transistor MMIC
Amplifier.
Sirenza Microdevices' SBW-5089 is a high performance
InGaP/GaAs Heterojunction Bipolar Transistor MMIC
Amplifier. A Darlington configuration designed with InGaP
process technology provides broadband performance up to
8 GHz with excellent thermal performance. The heterojunction
increases breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.
Product Features
- Wideband Flat Gain to 3GHz: +-1.4dB
- P1dB @ 6 GHz = 13.4dBm
- Input/Output VSWR <2.3 thru 8GHz
- Operates from Single Supply
- Robust 1000V ESD, Class 1C
- Patented Thermally Distributed Design
Product Applications
- Broadband Instrumentation
- Cellular, PCS, GSM, UMTS PA Drivers
- Sat Com Terminals
- Fiber Optic Driver
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