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SBA-5089 DC-5 GHz Cascadable InGaP/GaAs MMIC Amplifier
RF Micro Devices, Inc.
Sirenza Microdevices' SBA-5089 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier.
Sirenza Microdevices' SBA-5089 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process
technology provides broadband performance up to 5 GHz with
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.
Product Features
- IP3: +34.1dBm at 1950 MHz
- Pout: +13.0dBm at -45.0dBc ACPR IS-95 1950 MHz
- Operates from Single Supply
- Robust 1000V ESD, Class 1C
- Patented Thermally Distributed Design
Product Applications
- PA Driver Amplifier
- Cellular, PCS, GSM, UMTS
- IF Amplifier
- Wireless Data, Satellite Terminals
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