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VRF152 -- RF Power Vertical MOSFET Transistor

The new VRF152 from Microsemi is a gold-metalized silicon n-channel RF power transistor designed for broadband commercial and hi-rel applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulations distortion. It can operate up to 175MHz at 150W with a typical gain of 13dB at very high efficiency on a 50V DC supply.
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Datasheet: VRF152 -- RF Power Vertical MOSFET Transistor

The new VRF152 from Microsemi is a gold-metalized silicon n-channel RF power transistor designed for broadband commercial and hi-rel applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulations distortion. It can operate up to 175MHz at 150W with a typical gain of 13dB at very high efficiency on a 50V DC supply.

Key Performance Features of the VRF152

  • High 130V breakdown voltage for improved ruggedness
  • Low 200mohm Rdson for improved efficiency
  • Typical 22dBgain at 30MHz
  • Typical 13dB gain at 175MHz
  • 30:1 VSWR
  • Nitride passivated and gold metallization for improved reliability

Click Here To Download:
Datasheet: VRF152 -- RF Power Vertical MOSFET Transistor

Click here for information on the ARF477FL RF power MOSFET transistors.


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