Products and Services
LDMOS Transistors For S-Band Radar Applications
Integra Technologies recently announced the newest addition to its growing lineup of high power, high performance LDMOS transistors for S-band radar applications. This device announcement is the first in a series of new high power S-band devices for pulsed operation in the 2.7 to 3.5 GHz frequency range. Coming soon are more high power pre-matched devices and high power 50 ohm internally matched devices.
The ILD3135M120 offers a minimum of 120 watts of output power with 10dB nominal gain across the instantaneous operating frequency band of 3.1-3.5GHz. It operates with stability into any phase of a 3:1 load VSWR. It features a complete gold metal system – die, wire bond and package, for maximum reliability in pulsed radar systems. It is internally pre-matched for ease of use. 100% production high power testing is performed in a fix-tuned broadband RF test fixture.
Please feel free to click on the hyperlinks below to access the complete datasheet for this or any of the other applicable devices. All are available for immediate sampling!
|
Pout |
Pin |
Gain |
VDD |
PW
(us) |
DF (%) |
P/N |
|
|
LDMOS
Pre-Matched |
36 |
3.5 |
10.2 |
32 |
100 |
10 |
|
|
154 |
14
|
10.4 |
32
|
300
|
10 |
||
|
|
|
|
|
|
|
|
|
|
LDMOS
50 Ohm Matched 3.0-3.5
GHz |
2.0 |
20 |
10 |
28 |
100 |
10 |
|
|
4.0 |
40 |
10 |
28 |
100 |
10 |
