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GaAs Flip Chip Schottky - Single
Microsemi Corporation
MDT's MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip configurations. These Schottky devices have low series resistance and low junction capacitance. The resulting low noise figure makes these diodes suitable for sensitive mixer and detector applications from below X band to beyond Ka band frequencies...
Click Here To Download:
•Datasheet: Flip Chip GaAs Schottky: Single Junction – Low Capacitance Design
•Datasheet: Flip Chip GaAs Schottky: Single Junction – Low Rs Design
MDT's MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip configurations. These Schottky devices have low series resistance and low junction capacitance. The resulting low noise figure makes these diodes suitable for sensitive mixer and detector applications from below X band to beyond Ka band frequencies.
•Datasheet: Flip Chip GaAs Schottky: Single Junction – Low Capacitance Design
•Datasheet: Flip Chip GaAs Schottky: Single Junction – Low Rs Design
•Datasheet: Flip Chip GaAs Schottky: Single Junction – Low Capacitance Design
•Datasheet: Flip Chip GaAs Schottky: Single Junction – Low Rs Design
MDT's MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip configurations. These Schottky devices have low series resistance and low junction capacitance. The resulting low noise figure makes these diodes suitable for sensitive mixer and detector applications from below X band to beyond Ka band frequencies.
Features
- Low-Noise Performance
- High Cut-off Frequency
- Passivated to Enhance Reliability
- Packaged Diodes and Bondable Chips
Applications
- Single and Balanced Mixers and Detectors
- Transceivers X, K and Ka Bands
- 30 and 60 GHz Radios
- Automotive Radar Detectors
Click Here To Download:
•Datasheet: Flip Chip GaAs Schottky: Single Junction – Low Capacitance Design
•Datasheet: Flip Chip GaAs Schottky: Single Junction – Low Rs Design
