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SZP-3026Z - 2W Class AB Amplifier

The SZP-3026Z is a high linearity 3.0-3.8 GHz 2W single stage Class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package. The HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
Details

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Datasheet: SZP-3026Z - 2W Class AB Amplifier

The SZP-3026Z is a high linearity 3.0-3.8 GHz 2W single stage Class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package. The HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a flexible final or driver stage for 802.16 WiMAX equipment in the 3.0-3.8 GHz bands, and it can operate from a 3V to 6V supply. It is prematched to approximately 5 ohms on the input for broadband performance and ease of matching at the board level. It features an output power detector, on/off power control, ESD protection, excellent overall robustness, and a proprietary hand reworkable and thermally enhanced SOF-26 package.

Features
  • Pout = +26dBm at 2.5% EVM
  • P1dB = 33.2 dBm
  • Gain = 12.0 dB
  • Thermally enhanced proprietary SOF-26 package
  • On chip output power detector
  • Robust 1000V ESD, Class 1C
  • Power Supply Range = 3V to 6V

Click Here To Download:
Datasheet: SZP-3026Z - 2W Class AB Amplifier


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RF Micro Devices, Inc.

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