Located in California’s Silicon Valley, MicroWave Technology, Inc. (MwT) was founded in 1982 by technical principals with broad experience in Gallium Arsenide (GaAs) device design and fabrication. With a factory occupying 35,000 square foot, the Company’s principal assets include both its GaAs semiconductor fab and a hybrid chip and wire microwave integrated circuit (HMIC) manufacturing facility. The vertical manufacturing and product strength provide MwT uncommon flexibility and opportunity in the microwave component marketplace.

Today MwT is a leading U.S. based merchant manufacturer of discrete Gallium Arsenide diodes and transistors (FETs, PHEMTs, and Gunn Diodes). Early work focusing on device reliability resulted in proprietary metallization systems which make MwT’s devices impervious to hydrogen contamination, now an item of great concern to the high-reliability industry. These devices employ proprietary epi material and quarter micron recessed gate process technology, which result in highly linear (+48dBm IP3 in a 1W P-1dB Wireless Amp) and low phase noise (-125dBc @100 KHz Offset in a 17.5GHz DRO) devices with power outputs ranging from 10 milliwatts to 5 watts. These devices, sold as chips or in packages, find wide use in the amplification of signals from 10 MHz to 40 GHz in the transmission or reception of information in wireless infrastructure systems, industrial RF applications, and in various defense and space electronics.

By taking advantage of the low intermodulation distortion characteristics of MwT’s GaAs FETs, the Company has enjoyed a growing reputation for its product line of small internally matched modular surface mount transmit and receive amplifier modules aimed at multi-carrier and/or digitally modulated (high linearity) wireless infrastructure and military communication systems. Principal applications are as receiver front ends and as driver or picocell output amplifiers in cellular, PCS and WLL base station and military high reliability communication. Noteworthy new products have extremely low input and output return loss providing ease of gain insertion in highly critical high linearity power amplifier cascades.

MwT offers its high-reliability- proven thin film circuit processing capability to both internal and external customer’s usage. Employing thin film hybrid microcircuit construction, MwT produces and markets various standard modular amplifier products to 26 GHz. These modules are also building elements for MwT to design and manufacture standard as well as custom connectorized amplifiers for defense and telecommunication applications.

MwT has many years of experience of doing customer specials and has a vast library of custom designs based on MwT devices. MwT uses both its standard and custom versions of its parts to produce specialized amplifiers and board level products. Our proven experience and track record can help you save design cost, time, and engineering resource. Examples include low frequency LNA, Wireless LNA booster amplifier, Integrated building blocks, high frequency oscillators, evaluation boards and test fixtures.

If you do not see a product perfectly suited to your needs, please contact us. Flexibility and fast custom product design are our major strengths, we would be happy to discuss your detailed requirements with you.

Click Here To Download:
•2007 - 2008 Product Selection Guide
•Capabilities Profile: Standard Amplifiers