Founded in 1987, MILMEGA designs and manufactures solid state, high power amplifiers for commercial and government applications. The amplifier products range in frequency from 80 MHz to 8 GHz with power levels to 1 kilowatt.

The Company employs 35 design and production engineers and is based in Ryde on the Isle of Wight in England.

MILMEGA's first design was a major contract to deliver an innovative narrow-band amplifier to meet the demanding requirements of a technologically advanced medical product used in the treatment of prostate cancer.

Following this early success the Company set out to build a skilled team of design and production engineers to deliver further innovative products by exploiting the potential of emerging power device technologies.

Today, MILMEGA's design engineers are considered amongst the best in the field with an award winning design in the Series 2000 broadband Class A family, pulsed Class C amplifiers and ultrabroadband UHF and microwave amplifiers using GaAsFET, MMIC and more recently, Silicon Carbide and Gallium Nitride technology.

The Company has also created a highly and continually trained manufacturing team focused on quality and reliability, assembling and testing amplifiers of which over 70% are exported to the Far East, EMEA and North America, and used in applications as diverse as:

Physics Research – Colliding electrons and positrons in the search for new sub-atomic particles, MILMEGA supplies amplifiers that power RF longitudinal damping systems.

Electromagnetic Compatibility (EMC) Testing – Creating broadband RF immunity test fields strengths at 600 V/m.

Defense – Operating over wide temperature ranges in rugged environments in a range of applications including sophisticated jamming and surveillance solutions.

Communications Testing – Where MILMEGA amplifiers' exceptional linearity is typically used in Power device testing, Passive intermodulation (PIM) testing, Intermodulation testing, Multi-tone testing and Adjacent channel power testing.

In 2004 the Company was acquired by its management team in a management buyout (MBO) in part financed by venture capital funding from South East Growth Fund. Since the MBO the Company has doubled in size expanding into China and North America and has invested heavily in new product development to leverage the benefits of new transistor technologies, in particular, Silicon Carbide (SiC) and Gallium Nitride (GaN).