Application Note: Pulsed-Bias Pulsed-RF Harmonic Load Pull For Gallium Nitride (GaN) And Wide Band-Gap (WBG) Devices

By Steve Dudkiewicz, Maury Microwave Corporation

This application note is reprinted in this form with permission of IEEE from a technical paper originally presented by the author at a technical session of the 2nd International IEEE Conference on Microwaves, Communications, Antennas and Electronic Systems (IEEE COMCAS 2009). Copyright 2009 by IEEE. All rights reserved.

Abstract — For the first time ever, a commercially available pulsed-bias, pulsed-RF harmonic load pull system is being offered for high power and wide band-gap devices. Pulsing DC bias in conjunction with pulsing RF reduces slow (long-term) memory effects by minimizing self heating and trapping, giving a more realistic observance of transistor operating conditions. IV, S-Parameter, and Load Pull measurements taken under pulsed-bias pulsed-RF conditions give more accurate and meaningful results for high-power pulsed applications.

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