Downloads
Datasheet: IB0912M350 AVIONICS TRANSISTORS
Source:
Integra Technologies, Inc.
The high power pulsed transistor device part number IB0912M350 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under TACAN pulsing conditions and Vcc=50V, this common base device supplies a minimum of 350 watts of peak pulse power. It utilizes a low loss internal input impedance matching structure to yield maximum device gain and to ease the implementation of external matching circuitry. The new generation bipolar transistor geometry utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.
Register Today. It's Fast And Free.
The content you requested is only available to registered users of RF Globalnet. By registering now, you'll get access to this piece of content and thousands of additional articles and product reviews across our entire network of sites.
Already Registered? Sign In.
