XP1005 Four Stage 35 to 43 GHz GaAs pHEMT MMIC Power Amplifier

Mimix Broadband, Inc.'s XP1005 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) four stage power amplifier, which functions as an excellent saturated output stage. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this power amplifier covers the 35 to 43 GHz frequency band, and includes Lange couplers to achieve good output return loss. The MMIC device has a typical small signal gain of 26 dB, with 24 dBm typical P1dB compression point.

This power amplifier, identified as XP1005, is well suited for wireless communications applications, such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications. The XP1005 is uniquely designed for PDH radios requiring high gain, good output power and the ability to control saturated output power.

Mimix performs 100% on-wafer RF, DC and output power testing on the XP1005, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available today from stock, and production quantities are available 6-10 weeks after order processing.

Click here to download the XP1005 datasheet in pdf format.