Wolfspeed To Exhibit & Present At EuMW 2016

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, is exhibiting, releasing two new products, and delivering two technical presentations at European Microwave Week (EuMW) 2016, which will take place October 3 – 7 in London.

During the event, Wolfspeed will officially release two new products to market: the highest power 50V GaN HEMT demonstrated to date — its 900W CGHV14800 GaN HEMT for L-Band radar applications — and its new CGHV59070 GaN HEMT for C-Band radar systems, an ideal driver for the highest power C-Band radar device on the market: Wolfspeed’s 350W CGHV59350 GaN HEMT for 5.2 – 5.9 GHz operation, both of which were demonstrated earlier this year at the International Microwave Symposium.

Delivering a minimum of 800W of pulsed power at 1.2 – 1.4 GHz and 50V operation with better than 65% drain efficiency, the CGHV14800 features high efficiency, high gain, and wide bandwidth capabilities, and is ideal for L-Band radar amplifier applications, including: air traffic control (ATC) radar, penetration radar, antimissile system radar, target-tracking radar, and long-range surveillance radar. Designed to operate at 4.5 – 5.9GHz from a 50V rail, the internally-matched CGHV59070 GaN HEMT delivers 90W typical POUT at 50V, 55% drain efficiency at high 14dB power gain, and is especially ideal for use in linear and compressed amplifier circuits in marine radar, weather monitoring, air and maritime vessel traffic control, and port security applications.

In addition to exhibiting, demonstrating new products, and promoting its now-complete lineup of high efficiency, high gain, and wide bandwidth C-Band radar parts at Stand #156, Wolfspeed is also contributing to the technical conference program. On Wednesday, October 5, from 12:10 – 12:35pm, Wolfspeed’s Manager of MMIC Design and Test, Jeremy Fisher, will deliver a presentation entitled “Streamlined MMIC Design for High power, High Frequency Applications” during the RF and Microwave Power Amplifier Program sponsored by National Instruments. Later that day, from 3:15 – 4:00pm, Wolfspeed’s RF Product Development Manager, Simon Wood, will deliver a presentation entitled “Advances in GaN Devices for High Power, Low Cost Applications” during the workshop devoted to recent advances in GaN power HEMTs related to thermal problems and low-cost approaches.

“We are thrilled to once again exhibit and contribute to the technical program at European Microwave Week,” said Jim Milligan, RF and microwave director, Wolfspeed. “The market introduction of our new C- and L-Band radar products further extends our industry-leading GaN-on-SiC radar product portfolio, which delivers the wider bandwidths, higher power, and higher efficiencies necessary to achieve smaller, lighter, and higher power RF amplifiers that are critical for the development of the next-gen military, aerospace, and commercial radar applications.”

For more information about the products that Wolfspeed will be promoting at EuMW 2016, please visit the embedded product number links above to access corresponding product datasheets, navigate to http://go.wolfspeed.com/eumw2016, or visit Wolfspeed at Stand #152 at European Microwave Week, October 3 – 7 in London. For all other inquiries about Wolfspeed RF products and foundry services, please visit http://www.wolfspeed.com/RF.

About Wolfspeed
Wolfspeed, A Cree Company, is leading the innovation and commercialization of silicon carbide and gallium nitride, liberating designers to invent power and wireless systems for a responsible, energy-efficient future.

Wolfspeed’s wide bandgap semiconductor products for power and radio-frequency (RF) applications deliver new levels of performance through increased efficiency, higher switching frequency and reduced system size and weight for the transportation, industrial, energy and communications markets.

For more information, visit www.wolfspeed.com.

About Cree
Cree is a market-leading innovator of lighting-class LEDs, lighting products and semiconductor products for power and radio frequency (RF) applications. Cree believes in better light experiences and is delivering new innovative LED technology that transforms the way people experience light through high-quality interior and exterior LED lighting solutions.

Cree’s product families include LED lighting systems and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and RF devices. Cree’s products are driving improvements in applications such as general illumination, electronic signs and signals, power supplies and inverters.

For more information, visit www.cree.com.