09.03.13 -- Wearable Electronics Market Worth $8.36 Billion By 2018
The Expanding Role Of GaN HEMT Devices In Military Electronics Design By Tom Dekker, Cree
Although still a new technology in the mid-2000s, GaN HEMTs exhibited distinct performance advantages when compared to the older technologies. GaN devices offered high-voltage, high-power density capabilities that allowed amplifier designs high power with increased bandwidth at efficiencies (as much as 50% higher) than conventional silicon or GaAs devices. These characteristics enabled design engineers to reduce the size, weight, and complexity of their transmitters and thermal management, especially when compared to the older deployed systems.
DSEI is the world’s largest fully integrated defense and security exhibition that brings together the entire industry to source the latest equipment and systems, develop international relationships, and generate new business opportunities. Visit us in ExCel, London, from September 10 to 13.
This datasheet contains specifications for Phonon’s 101654.100 1200 MHz voltage-controlled SAW oscillator, suitable for analog signal processing in radar, communications, electronic warfare, and other defense and space applications.
These silicon-based SPDT and SPST PIN diode switches are suited for transmit/receive switching and failsafe switching in TD-SCDMA and LTE base stations, as well as transmit/receive switching in land mobile radios, public safety radios, and military communications systems.
The dB-3904 TWT amplifier is ideal for test and measurement, antenna pattern measurement, RFI/EMI/EMC testing, radar cross-section measurements, electronic warfare simulation, and electronic countermeasure applications.
CRFS is a leading RF technology company that provides robust, cost-effective systems for continuous remote spectrum monitoring and surveillance, based on its breakthrough RFeye receiver. Visit them at DSEI 2013, where CRFS and X-COM Systems will be exhibiting in the UK Group, in the South Hall, Stand S3-320. Learn more.