Product/Service

W-Band Low Noise Amplifiers

Source: Northrop Grumman Microelectronic Products & Services

W-Band Low Noise Amplifiers

Northrop Grumman Microelectronics Products & Services’ latest entry in their series of W-band products include two new InP HEMT low noise amplifiers covering the 71-96 and 80-100 GHz frequency ranges. Both amplifiers are ideal for applications involving W-band imaging, sensors, radar, and short haul/high capacity links.

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Individual model specifications include:

ALP283 LNA:

  • RF frequency: 80-100 GHz
  • Broadband Operation
  • Linear gain: 29 dB, typical
  • Noise Figure: 2.5 dB, typical
  • Average NF (80-100 GHz): 2.1 dB, typical
  • 0.1 um InP HEMT process
  • P1dB : 3 dBm (Est.)
  • Microstrip Topology MMIC, In-line Input & Output
  • 3 mil substrate
  • DC Power: < 35 mW
  • Die Size 1.7 sq. mm

ALP275 LNA:

  • RF frequency: 71-96 GHz
  • Broadband Operation
  • Linear gain: >= 26 dB, typical
  • Noise Figure: 3 dB, typical
  • P1dB : 4 dBm *
  • Microstrip Topology MMIC, In-line Input & Output
  • 0.1 um InP HEMT Process
  • 3 mil substrate
  • DC Power: 30 mW
  • Die Size 2.125 sq. mm

For more information on these low noise amplifiers, download the individual model datasheets. You can also contact Northrop Grumman Microelectronics Products & Services directly to discuss your application or to request a quote.

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