Product/Service

W-Band Low Noise Amplifiers

Source: Northrop Grumman Microelectronic Products & Services

W-Band Low Noise Amplifiers

Northrop Grumman Microelectronics Products & Services’ latest entry in their series of W-band products include two new InP HEMT low noise amplifiers covering the 71-96 and 80-100 GHz frequency ranges. Both amplifiers are ideal for applications involving W-band imaging, sensors, radar, and short haul/high capacity links.

Individual model specifications include:

ALP283 LNA:

  • RF frequency: 80-100 GHz
  • Broadband Operation
  • Linear gain: 29 dB, typical
  • Noise Figure: 2.5 dB, typical
  • Average NF (80-100 GHz): 2.1 dB, typical
  • 0.1 um InP HEMT process
  • P1dB : 3 dBm (Est.)
  • Microstrip Topology MMIC, In-line Input & Output
  • 3 mil substrate
  • DC Power: < 35 mW
  • Die Size 1.7 sq. mm

ALP275 LNA:

  • RF frequency: 71-96 GHz
  • Broadband Operation
  • Linear gain: >= 26 dB, typical
  • Noise Figure: 3 dB, typical
  • P1dB : 4 dBm *
  • Microstrip Topology MMIC, In-line Input & Output
  • 0.1 um InP HEMT Process
  • 3 mil substrate
  • DC Power: 30 mW
  • Die Size 2.125 sq. mm

For more information on these low noise amplifiers, download the individual model datasheets. You can also contact Northrop Grumman Microelectronics Products & Services directly to discuss your application or to request a quote.

Newsletter Signup
Newsletter Signup
Get the latest RF/microwave industry news, insights, and analysis delivered to your inbox.
Join your peers
By clicking Sign Me Up, you agree to our Terms and that you have read our Privacy Policy.