Toshiba Adds High Gain 200W GaN HEMT Power Amplifier For C-Band Radar Applications
Offer High Power, Gain and Efficiency to Enhance Weather RADAR Performance
Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., recently announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product family. The new device will be shown during the conference exhibition portion of the 2013 IEEE MTT-S International Microwave Symposium from June 4-6 in Seattle, Washington.
The 200W TGI5254-200P is Toshiba's first commercial C-Band GaN HEMT that is optimized for pulse operation to support C-Band RADAR applications. The new device operates in the 5.2 GHz1 to 5.4 GHz range. RF performance specifications include output power of 53.0dBm (typ.) with 43dBm input power, power gain of 10.0dB2 (typ.) and drain current of 2.4Amps2 (typ.) with pulse width of 200 µsec (nom.) and duty ratio of 10 percent (nom.) . This device enables increased output power and helps reduce size and weight in solid state power amplifiers (SSPA) for RADAR applications.
"Although this is our initial entry into this specific type of C-Band GaN HEMTs, Toshiba has long been a leading manufacturer of solid state power amplifiers for RADAR applications in the Japanese domestic and international markets," said Homayoun Ghani, business development manager, microwave devices, for TAEC's Discrete Business Unit. "Our GaN HEMTs have been one of the technological foundations helping to accelerate the modernization of RADAR technology from a tube-based to a solid-state-based design. In fact, solid-state weather RADAR systems using Toshiba devices are currently in operation at several sites in Japan."
|Output Power, Pout (typ.)||200W|
|Linear Gain , GL (typ.)||10.0dB|
|Power Efficiency||40 percent|
|Pulse Conditions (nom.)||200 µsec, 10percent|
Pricing and Availability:
Samples of the Toshiba C-Band Ga N HEMT will be available in Q3 of 2013 . For pricing, please contact your Toshiba representative.
Toshiba Microwave Product Overview:
Toshiba is a leading supplier of high-performance gallium nitride (GaN) and gallium arsenide (GaAs) microwave devices that operate in C, X, Ku and Ka frequency bands. Featuring high power added efficiency and high gain, these products are used in wireless applications such as RADAR systems, SATCOM, microwave link, medical equipment, and industrial applications.
*About Toshiba Corp. and TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), discrete devices, advanced materials, medical tubes, custom SoCs/ASICs, imaging products, microcontrollers and wireless components that make possible today’s leading smartphones, tablets, cameras, medical devices, automotive electronics, enterprise solutions and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's fifth largest semiconductor manufacturer (Gartner, 2012 Worldwide Semiconductor Revenue, April, 2013). Toshiba Corporation was founded in 1875 and today has over 554 subsidiaries and affiliates, with 210,000 employees worldwide. For more information, visit www.toshiba.co.jp/index.htm.
1For purposes of measuring frequency in this context, one Gigahertz (GHz) = 1,000,000,000 cycles per second.
2with a supply voltage of 24V at 25°C under specified pulse conditions .
SOURCE: Toshiba America Electronic Components, Inc.