Datasheet: RF Power Transistor: 250 Watt, 50 Volt HF50-250

The HF50-250 RF Power transistor is designed for the 50V, 2-30 MHz RF Amplifier, RF Power Supply and RF Power Generator markets. Operating at 30 MHz and 50 Volts DC, the device will provide a minimum Power Gain of 14.5 dB, with the minimum Output Power specified at 250 Watts, PEP. The HF50 series products utilize the unique Spectrum Devices Bipolar process, offering enhanced DC Breakdown characteristics with a marked improvement in BVCBO from 110 Volts to 185 volts. The HF50-250 is a drop-in replacement to the industry standard SGS Thomson/ST TH430 and Microsemi MS1004. The 250 Watt product provides the customer with an additional 1.0 dB of power gain over the competition, which provides additional margin for the amplifier output performance. The product is available in matched pair steps for Hfe, DC selection.