News | October 22, 2014

Richardson RFPD Introduces New 1200V Sic MOSFET For High-Voltage Industrial Applications From Microsemi

RFPD

1200V, 32A, 80mΩ SiC power MOSFET in a SOT-227 package

Richardson RFPD, Inc. announced recently the availability and full design support capabilities for a new 1200V, 32A, 80mΩ SiC MOSFET from Microsemi Corporation.

The APT40SM120J is built on Microsemi's patented SiC MOSFET technology, which features best-in-class RDS(on) vs. temperature, ultra-low gate resistance for minimizing switching energy loss, superior maximum switching frequency, and outstanding ruggedness with superior short circuit withstand.

The APT40SM120J is ideally suited for PFC and other boost converters, buck converters, two switch forward (asymmetrical bridge) converters, single switch forward converters, flyback converters, inverters, and other high-voltage industrial applications.

According to Microsemi, key features of the APT40SM120J include:

  • Drain-source breakdown voltage (V(BR)DS): 1200V
  • Continuous drain current (ID @ TC = 25 ºC): 32A
  • Continuous drain current (ID @ TC = 100 ºC): 23A
  • Drain-source on resistance (RDS(on) @ TJ = 25 ºC, VGS = 20V, ID = 20A): 80mΩ
  • Package: SOT-227

To find more information, or to purchase this product today online, please visit the http://www.richardsonrfpd.com/Pages/Product-Details.aspx?productId=1142258 webpage.

About Richardson RFPD
Richardson RFPD / Arrow RF & Power, an Arrow Electronics company, is a global leader in the RF and wireless communications, power conversion and renewable energy markets. It brings relationships with many of the industry’s top radio frequency and power component suppliers. Whether it’s designing components or engineering complete solutions, Richardson RFPD’s worldwide design centers and technical sales team provide comprehensive support for customers’ go-to-market strategy, from prototype to production. For more information, visit www.richardsonrfpd.com.

Source: Richardson RFPD