RF Transistors
Wideband RF transistors are optimized for amplification of DAB and DAR signals
Wideband RF transistors are optimized for amplification of DAB and DAR signals. Supporting digital and analog modulations, the devices are gold-metalized, silicon, LMDOS FETs that cover 1.4–1.6 GHz. Model PTF10125 features a push-pull configuration with intermodulation distortion of better than –35 dB for PEP levels up to 135 W. It features 13-dB linear gain and saturated power capability of 200 W.
Ericsson Components, RF Power Products, 675 Jarvis Rd., Morgan Hill, CA 95037. Tel: 408-778-9434; Fax: 408-779-3108.
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