Product/Service

RF Power Transistor - MAGX-001214-650L00 by MACOM

Source: MACOM

The MAGX-001214-650L00 is a gold-metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today's demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies.

GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty

Features

  • GaN on SiC Depletion-Mode Transistor Technology
  • Broadband Class AB Operation
  • Broadband Class AB Operation
  • Common-Source Configuration
  • Internally Matched
  • MTTF = 600 Years (TJ < 200°C)
  • +50V Typical Operation

Specifications

  • Min Frequency: 1200 MHz
  • Max Frequency: 1400 MHz
  • Gain: 19.5 dB
  • Pulse Width: 300 µS
  • Duty Cycle: 10 %
  • Output Power: 650.0 W
  • Bias Voltage: 50.0 V
  • Efficiency: 60 %
  • Peak Power: 650.0 W
  • Voltage (V) - RF Power Transistor: 50.0