1800 Watt, 1.0 - 1.1 GHz GaN RF Input-Matched Transistor: QPD1025 Datasheet

The QPD1025 discrete GaN on SiC RF transistor is ideal for IFF transponder and avionics applications. This device features over 1800 W output power, 65 V operating voltage, and a specific frequency range of 1.0 to 1.1 GHz. This input matched HEMT is in an industry standard air cavity package and can support both CW and pulsed operations. Download the datasheet for more information on QPD1025 transistor.