Newsletter | February 11, 2014

02.11.14 -- Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design

RF Globalnet Newsletter

Featured Article

Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design
By Alan Ake, Skyworks Solutions, Inc.
The latest mainstream pHEMT cascodes are fabricated in 0.25 micron pHEMT, where the 0.25 micron dimension refers to the gate width of the internal pHEMT transistors. These devices replace the previous generation 0.50 micron pHEMT cascodes, with the smaller gate width devices exhibiting higher gain and NF values that are roughly 0.25 dB lower than their predecessors at a given frequency. What follows is a brief discussion about some of the outstanding properties of these pHEMT cascode amplifiers, some potential applications that go beyond their traditional role as LNAs, and some comparisons with more traditional solutions for those applications.

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