02.11.14 -- Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design
Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design By Alan Ake, Skyworks Solutions, Inc.
The latest mainstream pHEMT cascodes are fabricated in 0.25 micron pHEMT, where the 0.25 micron dimension refers to the gate width of the internal pHEMT transistors. These devices replace the previous generation 0.50 micron pHEMT cascodes, with the smaller gate width devices exhibiting higher gain and NF values that are roughly 0.25 dB lower than their predecessors at a given frequency. What follows is a brief discussion about some of the outstanding properties of these pHEMT cascode amplifiers, some potential applications that go beyond their traditional role as LNAs, and some comparisons with more traditional solutions for those applications.
Mini-Systems, Inc., Electronic Package Division has been providing the electronics industry with the highest quality hybrid microelectronic packages available. It is best known for supplying the hybrid alternative to plastic microelectronic packages.
This power amplifier can be used in telecommunications, test instrumentation, and transceiver sub-assembly applications. It features super broadband performance with gain choice high power across the entire Ka band.