Raytheon Hits Another Major Milestone With GaN
Diamond materials to triple power density
Tewksbury, MA /PRNewswire/ -- Raytheon Company (NYSE: RTN) has achieved another significant milestone for next generation Gallium Nitride (GaN) Radio Frequency (RF) semiconductor technology. Through the Defense Advanced Research Projects Agency (DARPA) Near Junction Thermal Transport effort under the Thermal Management Technologies program, Raytheon's team is replacing GaN's current substrate, Silicon Carbide, with diamond, a material with 3-5X higher thermal conductivity, to create GaN on diamond devices.
Raytheon has demonstrated that GaN on diamond technology enables a 3X increase in transistor power density over GaN on Silicon Carbide, overcoming a major barrier to unlocking the potential of GaN devices. Data was obtained on a 10x125um (1.25mm) GaN on diamond HEMT, a device representing a unit cell for constructing Power Amplifier Monolithic Microwave Integrated Circuits (MMICs), the foundation of solid-state RF transmitters and Active Electronically Scanned Arrays. This result builds on prior successes, including Raytheon's industry-first demonstration of GaN on diamond transistors in 2009, and GaN on diamond MMICs in 2011.
"Raytheon continues to be an innovator leading the development of GaN technology," said Joe Biondi, vice president of Advanced Technology for Raytheon's Integrated Defense Systems (IDS) business. "We are now inserting GaN into DoD systems while remaining focused on continuing to increase performance of this revolutionary semiconductor to provide our warfighters with the most advanced sensing, communications and electronic warfare capabilities in the world."
GaN on diamond offers revolutionary performance improvement by reducing thermal resistance within the device and enabling GaN to be used at higher power densities, which will dramatically reduce the cost, size, weight and power of defense systems. GaN is a core competency within Raytheon and an integral technology behind some of the company's major programs (visit http://www.raytheon.com/capabilities/radar/) including Air and Missile Defense Radar and Next Generation Jammer. GaN's unique qualities allow radar, electronic warfare and communications systems to be smaller, more affordable and highly efficient.
Raytheon Company also recently announced that under the DARPA MTO Wide Bandgap Semiconductor Program, the company has systematically matured GaN from basic material to transistors, MMICs, Transmit/Receive (T/R) Modules and finally Transmit/Receive Integrated Multichannel Modules (TRIMMs), enabling game changing system performance for the DOD.
Raytheon Company, with 2013 sales of $24 billion and 63,000 employees worldwide, is a technology and innovation leader specializing in defense, security and civil markets throughout the world. With a history of innovation spanning 92 years, Raytheon provides state-of-the-art electronics, mission systems integration and other capabilities in the areas of sensing; effects; and command, control, communications and intelligence systems, as well as cyber security and a broad range of mission support services. Raytheon is headquartered in Waltham, Mass. For more about Raytheon, visit us at www.raytheon.com and follow us on Twitter @Raytheon.
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