NXP Unveils Airfast 3 RF Power Transistors To Advance Cellular Infrastructure For Smart Cities

New transistors make major leap in technology advancements meeting the stringent requirements for macro base stations operating between 1805 and 2690 MHz

London (GLOBE NEWSWIRE) -- European Microwave Week (EuMW) 2016 -- NXP Semiconductors N.V. (NASDAQ: NXPI) today introduced its third generation of Airfast products which include four LDMOS transistors for cellular macro base stations. The new Airfast 3 technology raises the bar in technology and meets the stringent requirements of all current wireless standards with wide instantaneous bandwidths to cover an entire cellular band using a single device.

NXP’s Airfast 3 delivers industry-leading performance in key areas that include efficiency, gain, RF output power, and signal bandwidth, while significantly reducing the footprint required to deliver a given level of RF output power. When compared to Airfast 2, this third generation delivers up to four percent greater efficiency (53 percent final-stage efficiency and up to 50 percent lineup efficiency), a 20 percent improvement in thermal performance, up to 90 MHz full-signal bandwidth, and space savings up to 30 percent.

"Continued advancement of RF power amplifiers is needed to reduce the size of cellular base stations," said Paul Hart, Executive Vice President and General Manager of NXP’s RF Power business unit. "Our third generation of Airfast solutions provide industry leading performance in the form factor needed to drive the industry forward."

New Airfast 3 High Power LDMOS Transistors
The four new Airfast 3 LDMOS RF power transistors designed for asymmetrical Doherty amplifier architectures include:

• A3T18H450W23S: 1805 to 1880 MHz, 89 W average RF output power, 17.2 dB gain, 51% efficiency
• A3T18H360W23S: 1805 to 1880 MHz, 56 W average RF output power, 17.5 dB gain, 53% efficiency
• A3T21H450W23S: 2110 to 2200 MHz, 89 W average RF output power, 15.5 dB gain, 49.5% efficiency
• A3T26H200W24S: 2496 to 2690 MHz, 37 W average RF output power, 16.3 dB gain, 50% efficiency

The new transistors are the first Airfast products to be housed in air-cavity plastic packages that combine exceptional RF performance with a lower thermal resistance reducing overall system heat dissipation.

Availability
The new Airfast 3 RF power transistors are currently sampling with production expected starting in Q4 2016. Reference circuits for various frequencies are also available.

For pricing or additional information, please contact your local NXP sales office or NXP approved distributor. For more information about third-generation Airfast products, visit www.nxp.com/Airfast.

Demonstration
Airfast 3 product demonstrations will be at European Microwave Week in London at the NXP booth# 96.

About NXP
NXP Semiconductors N.V. (NASDAQ: NXPI) enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is driving innovation in the secure connected vehicle, end-to-end security & privacy and smart connected solutions markets. Built on more than 60 years of combined experience and expertise, the company has 44,000 employees in more than 35 countries and posted revenue of $6.1 billion in 2015. Find out more at www.nxp.com.

NXP the NXP logo and Airfast are trademarks of NXP B.V. All other product or service names are the property of their respective owners. All rights reserved. © 2016 NXP B.V.

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