A pioneer in the design and fabrication of advanced semiconductors, Northrop Grumman Corporation has developed two high performance Monolithic Microwave Integrated Circuit (MMIC) broadband ultra-low-noise amplifiers (LNA) that are in production for immediate delivery.
The cost-effective indium phosphide (InP) high electron mobility transistor (HEMT) LNAs are for use in E-band and W-band commercial, civil and military applications such as communication links, sensors, millimeter-wave imaging, radars and digital microwave radios.
The compact die design of each LNA considerably reduces footprint size and exhibits unmatched ultra-low-noise performance and high gain.
"The LNAs are the initial release of products designed with the company's indium phosphide process, a powerful semiconductor technology that has successfully been used in Northrop Grumman's advanced military communication systems," said Frank Kropschot, general manager, Microelectronics Products and Services at Northrop Grumman. "For the first time, Northrop is offering products for similarly demanding commercial applications."
To ensure rugged and reliable operation, both LNAs are fully passivated. Both bond pad and backside metallization are Ti/Au, which is compatible with conventional die attach, thermocompression and thermosonic wire bonding assembly techniques.
Detailed datasheets on both LNAs can be found at www.northropgrumman.com/mps
Northrop Grumman manufactures the LNAs at its state-of-the-art microelectronics wafer fabrication facility in Manhattan Beach. A Department of Defense Trusted Foundry, the facility uses advanced gallium nitride, gallium arsenide and indium phosphide semiconductor manufacturing processes.
About Northrop Grumman
Northrop Grumman is a leading global security company providing innovative systems, products and solutions in unmanned systems, cyber, C4ISR, and logistics and modernization to government and commercial customers worldwide. For more information, visit www.northropgrumman.com.
SOURCE: Northrop Grumman Corp