Mobility Transistors

A family of low-noise pseudomorphic high-electron mobility transistors (PHEMT) uses the company's latest-generation gallium arsenide (GaAs) fabrication process. The ATF-34143 features 0.5 dB noise figure, +14 dBm third-order input intercept point and 17.5 dB gain at 2 GHz, 4 V, 60 mA. The transistor is optimized for 0.9 GHz to 2.5 GHz cellular PCS base station low-noise amplifiers (LNAs). The FET (field-effect transistor) also can be used in many other applications in the 450 MHz to 10 GHz frequency range. This ultra-low-noise transistor has a gate width of 800 microns and is supplied in the 2 mm x 2 mm SOT-343 surface mount plastic package, providing thermal resistance (theta jc) of 25° C/W.

Hewlett-Packard, 5301 Stevens Creek Blvd., P.O. Box 58059, Santa Clara, CA 95052-8059 Phone: 800-227-9770