Integra Announces Two New S-Band GaN Radar Devices

IGN2729M500 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 - 2.9 GHz instantaneous frequency band. Under 300us/10% pulse conditions it supplies a minimum of 500 watts of peak output power with typical performance of 560 watts, typically 12dB gain and over 60% efficiency. Specified operation is with Class AB bias. When appropriately rated, it is operable under a wide range of pulse widths and duty factors. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture. The device is rated for peak output power of 500W with 10% duty factor and average power of 50W.

IGN3135M130 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 3.1–3.5 GHz instantaneous frequency band. Under 300us / 20% pulse conditions it supplies a minimum of 130 watts of peak output power with typical performance of 150 watts with 12dB gain. Specified operation is with Class AB bias. When appropriately rated, it is operable under a wide range of pulse widths and duty factors. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture. The device is rated for peak output power of 130W with 20% duty factor and average power of 26W.