High Power 1214-370M Transistor
Source: Microsemi Corporation
This transistor provides RF pulsed Peak Power of 370 Watts at 330 us, 10%.
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•Datasheet: 1214-370M transistor
This state-of-the-art 1214-370M transistor offered by APT-RF provides RF pulsed Peak Power of 370 Watts at 330 us, 10%, along with power gain of 8.7 dB, and efficiency greater than 50% for use in L-Band 1200-1400MHz, Radar applications.
•Datasheet: 1214-370M transistor
•Datasheet: 1214-370M transistor
This state-of-the-art 1214-370M transistor offered by APT-RF provides RF pulsed Peak Power of 370 Watts at 330 us, 10%, along with power gain of 8.7 dB, and efficiency greater than 50% for use in L-Band 1200-1400MHz, Radar applications.
This hermetically solder-sealed transistor utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness.
Integrate four of the 1214-370M transistors and two driver stages - 1214-55 and 1214-220M, customer can comfortably achieve 1200 W output power for L-Band Radar application.
Click Here To Download:
•Datasheet: 1214-370M transistor
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