High Power Gallium Nitride (GaN) Amplifier: SSPA 2.0-4.0-100
Datasheet: High Power Gallium Nitride (GaN) Amplifier: SSPA 2.0-4.0-100
This RF power amplifier operates from a 28 Vdc power supply. Standby current is ~50 mA and the quiescent current is 5.25 amps without RF drive. This unit operates from -40C to 85C base plate temperature.
Noise figure is 10.0 dB typically across the band.
This high power RF module can be employed in high shock and vibration environments. Standard housing size is approximately 9.25(w) by 12.0(l) by 1.5(h) inches. For mounting and heat sink instructions, please contact the factory. An SMA female connector is standard on the RF input port. A type N female connector is standard on the output port. DC and logic connections are accessible via a DSUB connector. A logic high enables the amplifier to the On state. A low or open circuit high will disable the unit. Typical test data appears on page two of this data sheet at room temperature.
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