Linearity Of GaN-Based Solid State Power Amplifiers By Cristi Damian, M.E.E., Advantech Wireless
We know today that GaN is the foundation of all new power amplifier development and design, and that it offers unmatched performance, reliability, and efficiency. The purpose of this white paper is to characterize, in particular, the linearity of Advantech-based GaN SSPAS, when operated either in single carrier mode, or in multi-carrier mode. It also includes a comparison with TWTs.
This datasheet provides basic specifications for Northrop Grumman’s Microelectronic Products and Services’ line of W-band MMIC amplifiers. This line includes HEMT low-noise amplifiers, HEMT gain bock amplifiers, HEMT high-power amplifiers, and covers the 80 to 96 GHz frequency range.