White Paper | March 7, 2012

GaN Switches Enable Hot Switching At Higher Power

Source: RFMD

This article discusses the benefits of GaN HEMT-based switches for applications involving low power and high speed. Higher power handling, ruggedness capability, and excellent insertion loss and isolation over an ultra wide band are just a few of the benefits of GaN Switches.

As seen in the January 2012 edition of Microwave Journal. Reprinted with permission.

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