GaN/SiC Long-Pulse S-Band Transistor: IGN2731L200 Datasheet

The IGN2731L200 long-pulse transistor is designed with GaN on SiC HEMT technology and operates at 200 W for applications from 2.7 - 3.1 GHz. The transistor exhibits 14 dB typical gain, and 46 V drain bias at 3 milliseconds, 30% pulse conditions, and is specified for use under Class AB operation. It is an internal impedance pre-matched device, and is included with depletion mode. For more specifications on the GaN S-band long-pulse transistor, download the datasheet.